WebDec 14, 2016 · Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. WebApr 1, 2024 · In this paper, the intersubband optical absorption coefficients in strained InAs 1−x Sb x /Al y Ga 1−y As single quantum well are studied by solving the Schrödinger equation. Our results reveal that a red or a blue-shift can be obtained in the intersubband optical transitions as dependent on the shape of the InAsSb/AlGaAs quantum well and ...
Phys. Rev. Materials 2, 104602 (2024) - High-mobility InAs 2DEGs …
WebJan 1, 2024 · The explicit compound quantum well consists nominally of a 10 nm GaSb and a 13 nm InAs well. On top a 100 nm AlAs 0.08 Sb 0.92 barrier and a 5 nm GaSb cap finish the structure. The composition of the QW widths aims at an inversion of the electron and hole subbands. 8 × 8 kp simulations suggest an inversion of about 70 meV at k=0. WebOct 18, 2024 · High mobility, strong spin-orbit coupling, and large Landé g factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: … how to setup outlook for new user
Improvement of performance of InAs quantum dot solar cell …
WebJan 4, 2024 · a The quantum well consists of a 4 nm layer of InAs grown on top of an In 0.81 Ga 0.19 As layer and capped with 2 nm of In 0.81 Al 0.19 As for devices A1 and A2 and 10 … WebJan 1, 1992 · The relation of gate voltage to density of mobile carriers obtained from these measurements was in agreement with the simple capacitor model, indicating the absence of Fermi level pinning in the quantum well. InAs/AISb quantum wells are of interest because of the large conduction band offset of 1.3 eV between A1Sb and InAs [1] and the high ... WebApr 11, 2024 · [Show full abstract] comparison, the InAs QDs were inserted into the InGaAsP (1.35 μm, 1.35Q-InGaAsP) quantum well embedded in the 1.15Q-InGaAsP matrix at the active layer. And a 2 monolayer (ML ... notice of unilateral declaration